NA optimization of 360-nm and 300-nm pitch devices

NA optimization of 360-nm and 300-nm pitch devices

著者名:

Kim,H. ( Samsung Electronics Co.,Ltd. (Korea) )

Kim,S. ( Samsung Electronics Co.,Ltd. (Korea) )

Kim,C. ( Samsung Electronics Co.,Ltd. (Korea) )

Hong,J. ( Samsung Electronics Co.,Ltd. (Korea) )

Lee,J. ( Samsung Electronics Co.,Ltd. (Korea) )

Kang,H. ( Samsung Electronics Co.,Ltd. (Korea) )

Moon,J. ( Samsung Electronics Co.,Ltd. (Korea) )

さらに 2 件

掲載資料名:

Optical microlithography XI : 25-27 February 1998, Santa Clara, California

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3334

発行年:

1998

開始ページ:

673

終了ページ:

677

出版情報:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819427793 [0819427799]

言語:

英語

請求記号:

P63600/3334

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017855
シリーズID:	PA00000029
会議名:	SPIE Advanced Lithography : Optical Microlithography
回次:	1998 : 11th
会議開催地:	Santa Clara, CA, USA
会議開催年:	1998.02.25-1998.02.27

類似資料:

1 国際会議録 Lithography of 180-nm design rule for 1-Gb DRAM Nam,D., Lee,J., Kim,C., Choi,S., Kang,H., Moon,J. SPIE-The International Society for Optical Engineering	7 国際会議録 OPC in memory-device patterns using boundary layer model for 3-dimensional mask topographic effect Y. Kim, I. Kim, J. Park, S. Kim, S. Suh, Y. Cheon, S. Lee, J. Lee, C. Kang, J. Moon, J. Cobb SPIE - The International Society of Optical Engineering
2 国際会議録 Implementation of the ArF resists based on VEMA for sub-100-nm device Kim, H.-W., Lee, S., Choi, S.-J., Lee, S.-H., Kang, Y., Woo, S.-G., Nam, D.S., Chae, Y.-S., Kim, J.S., Moon, J.-T., … SPIE-The International Society for Optical Engineering	8 国際会議録 New PEC optimization for the mask fabrication of sub-50nm memory device S. Lee, D. Ryu, J. Park, D. Nam, H. Kim, B. Kim, S. Woo, H. Cho SPIE - The International Society of Optical Engineering
3 国際会議録 A method for generating assist-features in full-chip scale and its application to contact layers of sub-70nm DRAM devices D. Park, S. Kim, C. Hwang, S. Lee, H. Cho, J. Moon SPIE - The International Society of Optical Engineering	9 国際会議録 Synthesis of fluorinated materials for 193-nm immersion lithography and 157-nm lithography Lee, C. H., Han, S., Park, K. S., Kang, H. Y., Oh, H. W., Lee, J. E., Kim, K. M., Kim, Y. H., Kim, T. S., Oh, H.-K. SPIE - The International Society of Optical Engineering
4 国際会議録 Alignment system and process optimization for improvement of double patterning overlay W. Ma, J. Kang, C. Lim, H. Kim, S. Moon Society of Photo-optical Instrumentation Engineers	10 国際会議録 ArF issues of 90-nm-node DRAM device integration Goo, D.-H., Kim, B.-S., Park, J.-S., Yoon, K.-S., Lee, J.-H., Cho, H.-K., Han, W.-S., Moon, J.-T. SPIE-The International Society for Optical Engineering
5 国際会議録 Patterning 220-nm pitch DRAM patterns by using double mask exposure Nam,D., Seong,N., Cho,H., Moon,J., Lee,S. SPIE - The International Society for Optical Engineering	11 国際会議録 One step forward to maturity of AF (assistant feature)-OPC in 100-nm level DRAM application Kang,H.-J., Kim,B.-S., Park,J.-S., Kim,I.-S., Yeo,G.-S., Lee,J.-H., Cho,H.-K., Moon,J.-T. SPIE-The International Society for Optical Engineering
6 国際会議録 Fulfillment of model-based OPC for contact patterns in 60-nm level logic device Kim, S.-W., Lee, S.-W., Park, C.-M., Choi, S.-H., Lee, Y.-M., Kang, Y., Yeo, G.-S., Lee, J.-H., Cho, H.-K., Han, W.-S. SPIE - The International Society of Optical Engineering	12 国際会議録 Emergence of assist feature OPC era in sub-130-nm DRAM devices Kim,B., Kim,I., Yeo,G., Lee,J., Choi,J., Cho,H., Moon,J. SPIE-The International Society for Optical Engineering

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