Designing dual-trench alternating phase-shift masks for 140-nm and smaller features using 248-nm KrF and 193-nm ArF lithography
- 著者名:
Petersen,J.S. ( SEMATECH (USA) ) Socha,R.J. ( National Semiconductor Corp. (USA) ) Naderi,A.R. ( Photronics,Inc. (USA) ) Baker,C.A. ( Photronics,Inc. (USA) ) Rizvi,S.A. ( Photronics,Inc. (USA) ) BanDenBroeke,D. ( Photronics,Inc. (USA) ) Kachwala,N. ( SEMATECH (USA) and Rockwell Semiconductor Systems (USA) ) Chen,F. ( MicroUnity Systems Engineering,Inc. (USA) ) Laiding,S. ( MicroUnity Systems Engineering,Inc. (USA) ) Wampler,K.E. ( MicroUnity Systems Engineering,Inc. (USA) ) Caldwell,R.F. ( MicroUnity Systems Engineering,Inc. (USA) ) Takeuchi,S. ( Toppan Printing Co.,Ltd.(Japan) ) Yamada,Y. ( Toppan Printing Co.,Ltd.(Japan) ) Senoh,T. ( Toppan Printing Co.,Ltd.(Japan) ) McCallum,M. ( SEMATECH(USA)andMotorola(USA) ) - 掲載資料名:
- Photomask and X-Ray Mask Technology V
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 3412
- 発行年:
- 1998
- 開始ページ:
- 503
- 終了ページ:
- 520
- 出版情報:
- Bellingham, Wash.: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819428646 [0819428647]
- 言語:
- 英語
- 請求記号:
- P63600/3412
- 資料種別:
- 国際会議録
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Integrating RET and mask manufacturability in designs for local interconnect for sub-100-nm trenches
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