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High-power InAlGaAs laser diodes with high efficiency at 980 nm

著者名:
Mikulla,M. ( Fraunhofer-Institut fur Angewandte Festkorperphysik )
Schmitt,A.
Walther,M.
Kiefer,R.
Moritz,R.
Muller,S.
Sah,R.E.
Braunstein,J.
Weimann,G.
さらに 4 件
掲載資料名:
In-plane semiconductor lasers III : 27-29 January 1999, San Jose, California
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
3628
発行年:
1999
開始ページ:
80
終了ページ:
85
出版情報:
Bellingham, Wash.: SPIE - The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819430984 [0819430986]
言語:
英語
請求記号:
P63600/3628
資料種別:
国際会議録

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1 国際会議録 High-power 980-nm laser diodes by MBE (Invited Paper)

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8 国際会議録 High Density Plasma Deposited Silicon Nitride Films for Coating InGaAlAs High-Power Lasers

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9 国際会議録 Modeling of the performance of high-brightness tapered lasers

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4 国際会議録 8-W high-efficiency high-brightness tapered diode lasers at 976 nm (Invited Paper) [6104-13]

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