Optical emission related to holes confined in p-type ヲト-doped layers in GaAs
- 著者名:
Zhao, Q. X. Willander, M. Holtz, P. O. Lu, W. Dou, H. F. Shen, S. C. Li, G. Jagadish, C. - 掲載資料名:
- Optical microstructural characterization of semiconductors : sympoisum held November 29-30, 1999, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 588
- 発行年:
- 2000
- 開始ページ:
- 123
- 出版情報:
- Warrendale, Pa.: MRS-Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558994966 [1558994963]
- 言語:
- 英語
- 請求記号:
- M23500/588
- 資料種別:
- 国際会議録
類似資料:
SPIE-The International Society for Optical Engineering |
MRS - Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |
3
国際会議録
Scanning photoluminescence microscopy on GaAs/AlGaAs single quantum wire at room temperature
SPIE-The International Society for Optical Engineering |
SPIE - The International Society of Optical Engineering |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
MRS - Materials Research Society |
MRS - Materials Research Society |
12
国際会議録
The Influence of Silicon Diffusion on the Transport Properties of the 2DEG in Si ヲト-Doped GaAs
Trans Tech Publications |