Solid-Phase Epitaxial Regrowth and Dopant Activation of Arsenic-Implanted Metastable Pseudomorphic Ge0.08Si0.92 and Ge0.16Si0.84 on Si(100)
- 著者名:
Lie, D. Y. C. Song, J. H. Nicolet, M. -A. Theodore, N. D. Candelaria, J. Thomas, S. G. Tanner, M. O. Wang, K. L. - 掲載資料名:
- Strained layer epitaxy - materials processing and device applications : symposium held April 17-19, 1995, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 379
- 発行年:
- 1995
- 開始ページ:
- 467
- 出版情報:
- Pittsburgh, PA: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558992825 [1558992820]
- 言語:
- 英語
- 請求記号:
- M23500/379
- 資料種別:
- 国際会議録
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