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A New Type of Graded Buffer Layer for Gas-Source Molecular Beam Epitaxial Growth of Highly Strained InxGa1-xP/GaP Multiple Quantum Wells on GaP

著者名:
掲載資料名:
Strained layer epitaxy - materials processing and device applications : symposium held April 17-19, 1995, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
379
発行年:
1995
開始ページ:
67
出版情報:
Pittsburgh, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992825 [1558992820]
言語:
英語
請求記号:
M23500/379
資料種別:
国際会議録

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