Visible Blind uv GaN Photovoltaic Detector Arrays Grown by rf Atomic Nitrogen Plasma MBE

Visible Blind uv GaN Photovoltaic Detector Arrays Grown by rf Atomic Nitrogen Plasma MBE

著者名:

Hove, J. M. Van

掲載資料名:

III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

449

発行年:

1997

開始ページ:

1227

出版情報:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993532 [1558993533]

言語:

英語

請求記号:

M23500/449

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017523
シリーズID:	PA00000011
会議名:	Symposium on III-V nitrides
回次:	1996
会議開催地:	Boston, MA, USA
会議開催年:	1996.12.02-1996.12.06

類似資料:

1 国際会議録 Optimization of III-N Based Devices Grown by RF Atomic Nitrogen Plasma Using In Situ Cathodoluminescence Hove, J. M. Van, Chow, P. P., Klaassen, J. J., Hickman, R., II., Wowchak, A. M., Croswell, D. R., Polley, C. MRS - Materials Research Society	7 国際会議録 Nondestructive characterization of GaN films grown at low and high temperatures Yan, C. H., Yao, H. W., Hove, J. M. Van, Wowchak, A. M., Chow, P. P., Han, J., Zavada, J. M. MRS-Materials Research Society
2 国際会議録 High-Temperature GaN and AlGaN Photovoltaic Detectors for uv Sensing applications Hove, J. M. Van, Chow, P. P., Hickman, R., II., Klaassen, J. J., Wowchak, A. M., Polley, C. J. MRS - Materials Research Society	8 国際会議録 Group ?-nitride materials for ultraviolet detection applications Chow,P.P., Klaassen,J.J., VanHove,J.M., Wowchak,A.M., Polley,C., King,D. SPIE - The International Society for Optical Engineering
3 国際会議録 Uniformity and Performance Characterization of GaN p-i-n Photodetectors Fabricated From 3-Inch Epitaxy Hickman, R., II., Klaassen, J. J., Hove, J. M. Van, Wowchak, A. M., Polley, C., Rosamond, M. F., Chow, P. P. MRS - Materials Research Society	9 国際会議録 AIGaN/GaN MODFETs for High Frequency and High Power Applications Leier, H., Vescan, A., Dietrich, R., Wieszt, A., Tobler, H., Van Hove, J., Chow, P.P., Wowchak, A.M. Electrochemical Society
4 国際会議録 Uniformity, High-Temperature Performance and Reliability of X-band Nitride Power HEMTs Fabricated From 2-Inch Epitaxy Hickman, R., Hove, J. M. Van, Chow, P. P., Klaassen, J. J., Wowchack, A. M., Polley, C. J. MRS - Materials Research Society	10 国際会議録 Optical anisotropy of GaN/sapphire studied by generalized ellipsometry and Raman scattering Yan,C., Yao,H.W., Hove,J.M.Van, Wowchak,A.M., Chow,P.P., Zavada,J.M. SPIE - The International Society for Optical Engineering
5 国際会議録 AlGaN Schottky diodes for short-wavelength UV applications Chow,P.P., Klaassen,J.J., Vest,R.E., VanHove,J.M., Wowchak,A.M., Polley,C. SPIE-The International Society for Optical Engineering	11 国際会議録 P-GaAs Base Regrowth For GaN HBTs And BJTs Dang, Gerard, Zhang, A.P., Cao, X.A., Ren, F., Pearton, S.J., Cho, H., Hobson, W.S., Lopata, J., Van Hove, J.M., … Materials Research Society
6 国際会議録 AIGaN and GaN Ultraviolet Photodetectors Hickman, R., Van Hove, J.M., Klaassen, J.J., Polley, C.J., Wowchack, A.M., Chow, P.P., King, D.J., Pearton, S.I., Jung, … Electrochemical Society	12 国際会議録 Optical Properties of Wurtzite-and Zincblende-GaN Films Grown by RF Plasma-MBE Semendy, F., Bambha, N., Kim, J. G., Liu, H., Park, R. M. MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12