On the Epitaxy of Metal Films on GaN

On the Epitaxy of Metal Films on GaN

著者名:

Liu, Q. Z.

掲載資料名:

III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

449

発行年:

1997

開始ページ:

1079

出版情報:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993532 [1558993533]

言語:

英語

請求記号:

M23500/449

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017523
シリーズID:	PA00000011
会議名:	Symposium on III-V nitrides
回次:	1996
会議開催地:	Boston, MA, USA
会議開催年:	1996.12.02-1996.12.06

類似資料:

1 国際会議録 Metal - GaN Contact Technology Liu, Q.Z., Yu, L.S., Smith, K.V., Deng, F., Tu, C.W., Asbeck, P.M., Yu, E.T., Lau, S.S. Electrochemical Society	7 国際会議録 Structure of AlN on Si (111) Deposited With Metalorganic Vapor Phase Epitaxy Rehder, E., Zhou, M., Zhang, L., Perkins, N. R., Babcock, S. E., Kuech, T. F. MRS - Materials Research Society
2 国際会議録 Optimization of Reactor Geometry and Growth Conditions for GaN Halide Vapor Phase Epitaxy Safvi, S. A., Perkins, N. R., Horton, M. N., Thon, A., Zhi, D., Kuech, T. F. MRS - Materials Research Society	8 国際会議録 PHOTOELASTIC WAVEGUIDES FORMED BY INTERFACIAL REACTIONS ON SEMICONDUCTOR HETEROSTRUCTURES Yu, L. S., Guan, Z. F., Deng, F., Liu, Q. Z., Pappert, S. A., Yu, P. K. L., Lau, S. S., Redwing, J., Geisz, J., Kuech, … MRS - Materials Research Society
3 国際会議録 Growth of Thick GaN Films by Halide Vapor Phase Epitaxy Perkins, N.R., Horton, M.N., Matyi, R.J., Bandie, Z.Z., McGill, T.C., Kuech, T.F. Electrochemical Society	9 国際会議録 Dislocation mechanisms in the GaN lateral overgrowth by hydride vapor phase epitaxy Kuan, T. S., Inoki, C. K., Hsu, Y., Harris, D. L., Zhang, R., Gu, S., Kuech, T. F. MRS-Materials Research Society
4 国際会議録 Effect of Growth Parameters and Local Gas-Phase Concentrations on the Uniformity and Material Properties of GaN/Sapphire Grown by Hydride Vapor-Phase Epitaxy Safvi, S. A., Perkins, N. R., Horton, M. N., Kuech, T. F. MRS - Materials Research Society	10 国際会議録 Variation of GaN Valence Bands with Biaxial Stress: Quantification of Residual Stress and Impact on Fundamental Band Parameters Edwards, N. V., Yoo, S. D., Bremser, M. D., Horton, M. N., Perkins, N. R., Weeks, T. W., Jr., Liu, H., Stall, R. A., … MRS - Materials Research Society
5 国際会議録 Halide Vapor Phase Epitaxy of Gallium Nitride Films on Sapphire and Silicon Substrates Perkins, N. R., Horton, M. N., Bandic, Z. Z., McGill, T. C., Kuech, T. F. MRS - Materials Research Society	11 国際会議録 Dislocation arrangement in a thick LEO GaN film on sapphire Dunn, K. A., Babcock, S. E., Stone, D. S., Matyi, R. J., Zhang, L., Kuech, T. F. MRS-Materials Research Society
6 国際会議録 PtIn2 Ohmic Contacts to n-GaN Ingerly, D. B., Chang, Y. A., Perkins, N. R., Kuech, T. F. MRS - Materials Research Society	12 国際会議録 High Resolution X-ray Diffraction Analysis of Gallium Nitride Grown on Sapphire by Halide Vapor Phase Epitaxy Matyi, R. J., Zhi, D., Perkins, N. R., Horton, M. N., Kuech, T. F. MRS - Materials Research Society

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