Structural and Optical Properties of Homoepitaxial GaN Layers | 東京工業大学附属図書館文献データベース

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Structural and Optical Properties of Homoepitaxial GaN Layers

著者名:

Baranowski, J. M.

Liliental-Weber, Z.

Stepniewski, R.

さらに 6 件

掲載資料名:

III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

449

発行年:

1997

開始ページ:

393

出版情報:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993532 [1558993533]

言語:

英語

請求記号:

M23500/449

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017523
シリーズID:	PA00000011
会議名:	Symposium on III-V nitrides
回次:	1996
会議開催地:	Boston, MA, USA
会議開催年:	1996.12.02-1996.12.06

類似資料:

1 国際会議録 Interactions of LO Phonons With Bound Excitons in Homoepitaxial GaN Korona, K. P., Wysmolek, A., Baranowski, J. M., Pakula, K., Bergman, J. P., Monemar, B., Grzegory, I., Porowski, S. MRS - Materials Research Society	7 国際会議録 Observation of Native Ga Vacancies in GaN by Positron Annihilation Saarinen, K., Laine, T., Kuisma, S., Nissila, J., Hautojarvi, P., Dobrzynski, L., Baranowski, J. M., Pakula, K., … MRS - Materials Research Society
2 国際会議録 Photoluminescenee dynamics in the near bandgap region of homoepitaxial GaN layers Korona,K.P., Bergman,J.P., Monemar,B., Baranowski,J.M., Pakula,K., Grzegory,I., Porowski,S. Trans Tech Publications	8 国際会議録 GaN Crystals Grown in the Increased Volume High-Pressure Reactors Porowski, S., Bockowski, M., Lucznik, B., Wroblewski, M., krukowski, S., Grzegory, I., Leszczynski, M., Nowak, G., … MRS - Materials Research Society
3 国際会議録 Exciton Dynamics in Homoepitaxial GaN Monemar,B., Bergman,J.P., Ivanov,I.G., Baranowski,J.M., Pakula,K., Grzegory,I., Porowski,S. Trans Tech Publications	9 国際会議録 Growth and Properties of Bulk Single Crystals of GaN Suski, T., Perlin, P., Leszczynski, M., Teisseyre, H., Grzegory, I., Jun, J., Bockowski, M., Porowski, S., Pakula, K., … MRS - Materials Research Society
4 国際会議録 Magneto-Spectroscopy of Two-Electron Transitions in Homoepitaxial GaN Wojdak, M., Baranowski, J.M., Wysmolek, A., Pakula, K., Stepniewski, R., Potemski, M., Grzegory, I., Porowski, S. Materials Research Society	10 国際会議録 Properties of Homoepitaxially MBE-Grown GaN Suski, T., Krueger, J., Kisielowski, C., Phatak, P., Leung, M. S. H., Liliental-Weber, Z., Gassmann, A., Newman, N., … MRS - Materials Research Society
5 国際会議録 Luminescence of a New Material: GaN Grown on NdGaO3 Korona, K. P., Pakula, K., Wysmolek, A., Baranowski, J. M., Bergman, J. P., Monemar, B., Lukasiewicz, T., Luczynski, Z. MRS - Materials Research Society	11 国際会議録 Growth of GaN on patterned GaN/sapphire substrates with various metallic masks by high pressure solution method (Invited Paper) [6121-02] Bockowski, M., Grzegory, I., Nowak, G., Kamler, G, Lucznik, B., Wroblewski, P., Kwiatkowski, P., Jasik, K., Krukowski, … SPIE - The International Society of Optical Engineering
6 国際会議録 Structural Defects in Heteroepitaxial and Homoepitaxial GaN Lillental-Weber, Zuzanna, Ruvimov, S., Kisielowski, Ch., Chen, Y., Swider, W., Washburn, J., Newman, N., Gassmann, A., … MRS - Materials Research Society	12 国際会議録 Mg, segregation, difficulties of P-doping in GaN Liliental-Weber, Z., Benamara, M., Swider, W., Washburn, J., Grzegory, I., Porowski, S., Dupuis, R. D., Eiting, C. J. MRS-Materials Research Society

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