Gallium Nitride Thick Layers: Epitaxial Growth and Separation from Substrates

Gallium Nitride Thick Layers: Epitaxial Growth and Separation from Substrates

著者名:

Bel'kov, V. V.

掲載資料名:

III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

449

発行年:

1997

開始ページ:

343

出版情報:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993532 [1558993533]

言語:

英語

請求記号:

M23500/449

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017523
シリーズID:	PA00000011
会議名:	Symposium on III-V nitrides
回次:	1996
会議開催地:	Boston, MA, USA
会議開催年:	1996.12.02-1996.12.06

類似資料:

1 国際会議録 Pulsed Laser Deposition of Highly Crystalline GaN Films on Sapphire Vispute, R. D., Talyansky, V., Choopun, S., Enck, R., Dahmas, T., Ogale, S. B., Shama, R. P., Venkatesan, T., Li, Y. X., … MRS - Materials Research Society	7 国際会議録 Porous SiC substrate materials for high-quality epitaxial and bulk growth Mynbaeva, M., Savkina, N., Zubrilov, A., Seredova, N., Scheglov, M., Titkov, A., Tregubova, A., Lebedev, A., … MRS-Materials Research Society
2 国際会議録 Growth and Study of Thick 3C-SiC Epitaxial Layers Produced by Epitaxy on 6H-SiC Substrates A.A. Lebedev, V.V. Zelenin, P.L. Abramov, E.V. Bogdanova, S.P. Lebedev, D.K. Nel'son, B.S. Razbirin, M.P. Scheglov, A.S. … Trans Tech Publications	8 国際会議録 Shallow dopants and the role of hydrogen in epitaxial layers of Gallium Nitride (GaN) Gotz, W., Johson, N.M., Bour, D.P., Chen, C., Liu, H., Imler, W. Electrochemical Society
3 国際会議録 Polarization Memory in Band Edge Luminescence from Free Standing Gallium Nitride Kompan, M. E., Raevki, S. D., Safronov, I. N., Shabanov, I. Yu., Zhilyaev, Yu. V. Trans Tech Publications	9 国際会議録 Gallium Nitride Growth Using Diethylgallium Chloride as an Alternative Gallium Source Zhang, L., Zhang, R., Boleslawski, M. P., Kuech, T. F. MRS - Materials Research Society
4 国際会議録 Silicon Carbide Substrates for Epitaxial Growth of Aluminium Nitride by Chloride-Transport Process Avrov, D. D., Dorozhkin, S. I., Lebedev, A. O., Rastegaev, V. P., Tairov, Yu. M. Trans Tech Publications	10 国際会議録 Low Temperature Growth of Gallium Nitride on Quartz and Sapphire Substrates Goldys,E.M., Paterson,M.J., Zuo,H.Y., Tansley,T.L. Trans Tech Publications
5 国際会議録 Growth of Oriented Thick Films of Gallium Nitride From the Melt Dyck, J. S., Kash, K., Grossner, M. T., Hayman, C. C., Argoitia, A., Yang, N., Hong, M-H., Kordesch, M. E., Angus, J. C. MRS - Materials Research Society	11 国際会議録 Gallium Nitride Thick Films Grown by Hydride Vapor Phase Epitaxy Molnar, R. J., Maki, P., Aggarwal, R., Liau, Z. L., Brown, E. R., Melngailis, I., Gotz, W., Romano, L. T., Johnson, N. … MRS - Materials Research Society
6 国際会議録 Nucleation and Growth of Gallium Nitride Films on Si and Sapphire Substrates Using Buffer Layers Perkins, N. R., Horton, M. N., Zhi, D., Matyi, R. J., Bandic, Z. Z., McGill, T. C., Kuech, T. F. MRS - Materials Research Society	12 国際会議録 Experimental investigation of the transverse SBS excitation in anisotropic crystals Bel'kov,S.A., Dolgopolov,Yu.V., Kochemasov,G.G., Kulikov,S.M., Solov'eva,M.N., Sukharev,S.A., Voronich,I.N. SPIE-The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12