Blank Cover Image

The Growth of GaN Films by Migration-Enhanced Epitaxy

著者名:
Hooper, S. E.
Foxon, C. T.
Cheng, T. S.
Jeffs, N. J.
Ren, G. B.
Lacklison, D. E.
Orton, J. W.
Duggan, G.
さらに 3 件
掲載資料名:
III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
449
発行年:
1997
開始ページ:
325
出版情報:
Pittsburgh, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993532 [1558993533]
言語:
英語
請求記号:
M23500/449
資料種別:
国際会議録

類似資料:

1 国際会議録 Magnesium-Doped GaN Films Grown by Molecular Beam Epitaxy on GaAs(111)B Substrates

Cheng,T.S., Foxon,C.T., Jeffs,N.J., Dewsnip,D.J., Flannery,L.B., Orton,J.W., Harrison,I., Novikov,S.V., Ber,B.Ya., …

Trans Tech Publications
7 国際会議録 Modulation of Arsenic Incorporation In GaN Layers Grown by Molecular Beam Epitaxy

Novikov, S.V., Zhao, L.X., Foxon, C.T., Ber, B.Ja., Kovarsky, A.P., Harrison, I., Fay, M.W., Brown, P.D.

Materials Research Society
2 国際会議録 Electrical and Optical Characterization of Homojunction Gallium Nitride Light-Emitting Diodes

Laws, G. M., Morgan, J., Ren, G. B., Harrison, I., Larkins, E. C., Orton, J. W., Hooper, S. E., Cheng, T., Foxon, C. T.

MRS - Materials Research Society
8 国際会議録 EXAFS Studies of Group-III Nitrides

Jeffs, N. J., Blant, A. V., Cheng, T. S., Foxon, C. T., Bailey, C., Harrison, P. G., Mosselmans, J. F. W., Dent, A. J.

MRS - Materials Research Society
3 国際会議録 Far-infrared characterization of GaN epilayers

Mirjalili,G., Parker,T.J., Cheng,T.S., Foxon,C.T., Orton,J.W.

SPIE-The International Society for Optical Engineering
9 国際会議録 Epitaxial growth of CuAu-ordered CuInSe2 structural polytypes by migration enhanced epitaxy

Stanbery, B. J., Chang, C-H., Kim, S., Kincal, S., Lippold, G., Ahrenkiel, S. P., Li, L., Anderson, T. J., Al-Jassim, M. …

MRS-Materials Research Society
4 国際会議録 TEM and PL Characterization of MBE-Grown Epitaxial GaN/GaAs

Xin, Yan, Brown, P. D., Boothroyd, C. B., Preston, A. R., Humphreys, C. J., Cheng, T. S., Foxon, C. T., Andrianov, A. …

MRS - Materials Research Society
10 国際会議録 "A Comparison of Growth by Molecular Beam Epitaxy, Metalorganic Chemical Vapour Deposition and Chemical Beam Epitaxy"

Foxon T. C.

Kluwer Academic Publishers
5 国際会議録 MBE-Growth, Physics and Application of Group III Nitrides

Orton, J.W., Foxon, C.T.

Electrochemical Society
11 国際会議録 ScAlMgO4: An Oxide Substrate for GaN Epitaxy

Hellman, E. S., Brandle, C. D., Schneemeyer, L. F., Wiesmann, D., Brener, I., Siegrist, T., Berkstresser, G. W., …

MRS - Materials Research Society
6 国際会議録 Growth and Optical Properties of GaN Grown by MBE on Novel Lattice-Matched Oxide Substrates

Nicholls, J. F. H., Gallagher, H., Henderson, B., Trager-Cowan, C., Middleton, P. G., O'Donnell, K. P., Cheng, T. S., …

MRS - Materials Research Society
12 国際会議録 Structural Characterization of Thick GaN Films Grown by Hydride Vapor Phase Epitaxy

Romano, L. T., Molnar, R. J., Krusor, B. S., Anderson, G. A., Bour, D. P., Maki, P.

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12