Selective Growth GaN and Al0.2Ga0.8N on GaN/AlN/6H-SiC (0001) Multilayer Substrates Via Organometallic Vapor-Phase Epitaxy
- 著者名:
- 掲載資料名:
- III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 449
- 発行年:
- 1997
- 開始ページ:
- 107
- 出版情報:
- Pittsburgh, PA: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558993532 [1558993533]
- 言語:
- 英語
- 請求記号:
- M23500/449
- 資料種別:
- 国際会議録
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11
国際会議録
Growth and polarity control of GaN and AlN on carbon-face SiC by metalorganic vapor phase epitaxy
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Trans Tech Publications |
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