Nitrogen Plasma Pretreatment of Sapphire Substrates for the GaN Buffer Growth by Remote Plasma Enhanced MOCVD

Nitrogen Plasma Pretreatment of Sapphire Substrates for the GaN Buffer Growth by Remote Plasma Enhanced MOCVD

著者名:

掲載資料名:

III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

449

発行年:

1997

開始ページ:

53

出版情報:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993532 [1558993533]

言語:

英語

請求記号:

M23500/449

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017523
シリーズID:	PA00000011
会議名:	Symposium on III-V nitrides
回次:	1996
会議開催地:	Boston, MA, USA
会議開催年:	1996.12.02-1996.12.06

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