Formation of a Buried Soft Layer in SiC for "Compliant Substrate" by Ion Implantation

Formation of a Buried Soft Layer in SiC for "Compliant Substrate" by Ion Implantation

著者名:

掲載資料名:

Materials modification and synthesis by ion beam processing : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

438

発行年:

1997

開始ページ:

265

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993426 [1558993428]

言語:

英語

請求記号:

M23500/438

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017522
シリーズID:	PA00000011
会議名:	Symposium on materials modification and synthesis by ion beam processing
回次:	1996
会議開催地:	Boston, MA, USA
会議開催年:	1996.12.02-1996.12.05

類似資料:

1 国際会議録 Doping of GaN by Ion Implantation: Does it Work? Suvkhanov, A., Hunn, J., Wu, W., Thomson, D., Price, K., Parikh, N., Irene, E., Davis, R. F., Krasnobaev, L. MRS - Materials Research Society	7 国際会議録 Formation of Buried SiC Layers in Silicon by Ion Beam Synthesis Volz,K., Lindner,J.K.N., Stritzker,B. Trans Tech Publications
2 国際会議録 Influence of Annealing Conditions on Dopant Activation of Si+ and Mg+ Implanted GaN Suvkhanov, A., Parikh, N., Usov, I., Hunn, J., Withrow, S., Thomson, D., Gehrke, T., Davis, R. F., Krasnobaev, L. Ya. Trans Tech Publications	8 国際会議録 Formation of metallic nanoclusters in SiC by MeV ion implantation Ila, D., Williams, E. K., Elsamadicy, A., Gasic, B., Poker, D. B., Hensley, D. K., George, M. A., Ayoub, M. A., Larkin, … MRS-Materials Research Society
3 国際会議録 REGROWTH OF DAMAGED LAYERS IN DIAMOND PRODUCED BY ION IMPLANTATION Sandhu, G.S., Liu, B., Parikh, N.R., Hunn, J.D., Swanson, M.L., Wichert, Th., Deicher, M., Skudlik, H., Lennard, W.N., … Materials Research Society	9 国際会議録 MECHANICS OF FORMATION OF THIN BURIED OXIDE LAYERS BY ION IMPLANTATION White, Alice E.., Short, K.. T., Pfeiffer, L. N, West. K. W. Materials Research Society
4 国際会議録 ACCUMULATION OF IMPLANTATION DAMAGE IN MeV IMPLANTED DIAMOND CRYSTALS Hunn, John D., Withrow, S. P., Clausing, R. E., Heatherly, L., Bentley, J., Hembree, D. M., Jr., Parikh, N. R. MRS - Materials Research Society	10 国際会議録 FORMATION OF WELL-SEPARATED BURIED AND SURFACE NICKEL-SILICIDE LAYERS IN A SINGLE ION IMPLANTATION STEP Wu, M.F., De Wachter, J., Hendrickx, P., Pattyn, H., Van Bavel, A.M., Langouche, G., Vanhellemont, J., Bender, H., … Materials Research Society
5 国際会議録 FORMATION OF BURIED TiSi2 LAYERS IN SINGLE CRYSTAL SILICON BY ION IMPLANTATION Madakson, P., Clark, G. J., Legoues, F. K., d'Heurle, F. M., Baglin, J. E. E. Materials Research Society	11 国際会議録 MOLECULAR BEAM EPITAXIAL GROWTH OF GaAs ON SILICON WITH BURIED IMPLANTED OXIDES Das, K., Humphreys, T. P., Posthill, J. B., Parikh, N., tarn, J., El-Masry, N., Bedair, S. M., Chu, W. K., Wortman, J. … Materials Research Society
6 国際会議録 Formation of Buried Layers of (SiC)1-x(AlN)x in 6H-SiC Using Ion-Beam Synthesis Yankov, R. A., Hatzopoulos, N., Fukarek, W., Voelskow, M., Heera, V., Pezoldt, J., Skorupa, W. MRS - Materials Research Society	12 国際会議録 THE ROLE OF IMPLANT TEMPERATURE IN THE FORMATION OF THIN BURIED OXIDE LAYERS White, Alice E., Short, K.T., Pfeiffer, L.N., West, K.W., Batstone, J.L. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12