Interaction of Cavities and Dislocations in Semiconductors

Interaction of Cavities and Dislocations in Semiconductors

著者名:

Follstaedt, D. M.

掲載資料名:

Materials modification and synthesis by ion beam processing : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

438

発行年:

1997

開始ページ:

229

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993426 [1558993428]

言語:

英語

請求記号:

M23500/438

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017522
シリーズID:	PA00000011
会議名:	Symposium on materials modification and synthesis by ion beam processing
回次:	1996
会議開催地:	Boston, MA, USA
会議開催年:	1996.12.02-1996.12.05

類似資料:

1 国際会議録 Interaction of Cavities and Dislocations in Semiconductors Follstaedt, D. M., Myers, S. M., Lee, S. R., Reno, J. L., Dawson, R. L., Han, J. MRS - Materials Research Society	7 国際会議録 *The nature and origin of lateral composition modulations in short-period strain-layer superlattices Norman, A. G., Ahrenkiel, S. P., Moutinho, H. R., Ballif, C., Al-Jassim, M. M., Mascarenhas, A., Follstaedt, D. M., Lee, … MRS-Materials Research Society
2 国際会議録 *Reciprocal-space and real-space analyses of compositional modulation in InAs/AlAs short-period superlattices Follstaedt, D. M., Lee, S. R., Reno, J. L., Jones, E. D., Twesten, R. D., Norman, A. G., Ahrenkiel, S. P., Moutinho, H. … MRS-Materials Research Society	8 国際会議録 BINDING OF COPPER AND NICKEL TO CAVITIES IN SILICON FORMED BY HELIUM ION IMPLANTATION Myers, S. M., Follstaedt, D. M., Bishop, D. M. MRS - Materials Research Society
3 国際会議録 Interaction of deuterium with internal surfaces in silicon Myers,S.M., Follstaedt,D.M., Stein,H.J., Wampler,W.R. Trans Tech Publications	9 国際会議録 Detection of lateral composition modulation in an(InAs)n/(GaAs)n short-period superlattice on InP by magnetoexciton spectroscopy Jones,E.D., Millunchick,J.Mirecki, Follstaedt,D.M., Hafich,M.J., Lee,S., Reno,J., Twesten,R.D., Zhang,Y., … SPIE-The International Society for Optical Engineering
4 国際会議録 GETTERING OF METAL IMPURITIES BY CAVITIES IN SILICON Myers, S.M., Follstaedt, D.M., Bishop, D.M., Medernach, J.W. Electrochemical Society	10 国際会議録 SEGREGATION GEY?ERING BY IMPLANTATION-FORMED CAVITIES AND B-Si PRECIPITATES IN SILICON Myers, S., Petersen, G.A., Follstaedt, D.M., Seager, C.H., Headly, T.J., Michael, J.R., Deweerd, W., Koops, G., … Electrochemical Society
5 国際会議録 CAVITIES IN He-IMPLANTED Si: "INTERNAL” SURFACE SCIENCE Follstaedt, D.M., Myers, S.M., Stein, H.J. Materials Research Society	11 国際会議録 STRESS RELEASE IN ION IMPLANTED LATTICE MISMATCHED SEMICONDUCTOR HETEROSTRUCTURES Arnold, G.W., Picraux, S.T., Myers, D.R., Doyle, B.L., Peercy, P.S., Biefeld, R.M., Dawson, L.R. Materials Research Society
6 国際会議録 Cavity Nucleation and Evolution in He-Implanted Si and GaAs Follstaedt, D. M., Myers, S. M., Petersen, G. A., Barbour, J. C. MRS - Materials Research Society	12 国際会議録 Low-Energy Deposition of High-Strength Al(O) Alloys from an ECR Plasma Barbour, J. C., Follstaedt, D. M., Knapp, J. A., Marshall, D. A., Myers, S. M., Lad, R. J. MRS - Materials Research Society

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