Modification of defect structure and properties of CdxHg1-xTe semiconductors by laser pulses

Modification of defect structure and properties of CdxHg1-xTe semiconductors by laser pulses

著者名:

Gnatyuk,V. A. ( Institute of Semiconductor Physics (Ukraine) )
Mozol',P. E. ( Institute of Semiconductor Physics (Ukraine) )
Gorodnychenko,O. S. ( Kiev Taras Shevchenko Univ.(Ukraine) )
Borshch,V. V. ( Poltava Pedagogical Institute (Ukraine) )

掲載資料名:

Material science and material properties for infrared optoelectronics : 30 September-2 October 1996, Uzhgorod, Ukraine

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3182

発行年:

1997

開始ページ:

306

終了ページ:

312

出版情報:

Bellingham, Washington: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819426093 [0819426091]

言語:

英語

請求記号:

P63600/3182

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017401
シリーズID:	PA00000029
会議名:	Material Science and Material Properties for Infrared Optoelectronics
回次:	1996
会議開催地:	Uzhgorod, Ukraine
会議開催年:	1996.09.30-1996.10.02

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