CAD models of MOSFET's

著者名:: Merckel G.
掲載資料名:: Process and device modeling for integrated circuit design : [proceedings of the NATO Advanced Study Institute on Process and device modeling for integrated circuit design, Louvain-la-Neuve, Belgium, July 19-29, 1977]
シリーズ名:: NATO ASI series. Series E, Applied sciences
シリーズ巻号:: 21
発行年:: 1977
開始ページ:: 751
終了ページ:: 764
総ページ数:: 14
出版情報:: Leyden: Noordhoff International Publishing
ISSN:: 0168132X
ISBN:: 9789028606678 [902860667X]
言語:: 英語
請求記号:: N11482/21
資料種別:: 国際会議録

詳細

TDL書誌ID:	ZA00017296
シリーズID:	PA00000018
会議名:	NATO Advanced Study Institute on Process and device modeling for integrated circuit design
回次:	1977
会議開催地:	Louvain-la-Neuve, Belgium
会議開催年:	1977.07.19-1977.07.29

1 国際会議録 SOS MOSFET's Merckel G. Noordhoff International Publishing	7 国際会議録 From CAD Models to Knowledge Bases Gini G. Springer-Verlag
2 国際会議録 Short channels. Scaled down MOSFET's Merckel G. Noordhoff International Publishing	8 国際会議録 Design and Deformation of CAD Surface Models With Haptics X. Liu, G. Dodds, J. McCartney, B. K. Hinds American Society of Mechanical Engineers
3 国際会議録 Ion implanted MOS transistors Merckel G. Noordhoff International Publishing	9 国際会議録 Correlation Noise Measurements and Modeling of Nanoscale MOSFETs Lee, J., Bosman, G. Kluwer Academic Publishers
4 国際会議録 Surface characterization. Weak inversion Merckel G. Noordhoff International Publishing	10 国際会議録 Cutting Tool CAD / CAE Integrating System Modeling M.N. Ding, W. Ji, Y.W. Wang, D.G. Zuo, Y.N. Cheng Trans Tech Publications
5 国際会議録 Surface characterization. C-V technique Merckel G., de Pontcharra J. Noordhoff International Publishing	11 国際会議録 A Process-Based Compact Model for Double-Gate MOSFETs Chiang, M.H., Fossum, J.G. Electrochemical Society
6 国際会議録 Advanced CAD Models Ghione G., Bonani F. Kluwer Academic Publishers	12 国際会議録 Intelligent machining of rough components from optimized CAD models Lewis,G., Thompson,W. SPIE-The International Society for Optical Engineering

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