Ion implanted MOS transistors

Ion implanted MOS transistors

著者名:: Merckel G.
掲載資料名:: Process and device modeling for integrated circuit design : [proceedings of the NATO Advanced Study Institute on Process and device modeling for integrated circuit design, Louvain-la-Neuve, Belgium, July 19-29, 1977]
シリーズ名:: NATO ASI series. Series E, Applied sciences
シリーズ巻号:: 21
発行年:: 1977
開始ページ:: 677
終了ページ:: 688
総ページ数:: 12
出版情報:: Leyden: Noordhoff International Publishing
ISSN:: 0168132X
ISBN:: 9789028606678 [902860667X]
言語:: 英語
請求記号:: N11482/21
資料種別:: 国際会議録

詳細

TDL書誌ID:	ZA00017296
シリーズID:	PA00000018
会議名:	NATO Advanced Study Institute on Process and device modeling for integrated circuit design
回次:	1977
会議開催地:	Louvain-la-Neuve, Belgium
会議開催年:	1977.07.19-1977.07.29

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