Fast Pulsed Temperature Mode of the Sensor Operation to Reduce the Power Consumption and to Improve the Metal Oxide Semiconducting Sensing Layer Selectivity

Fast Pulsed Temperature Mode of the Sensor Operation to Reduce the Power Consumption and to Improve the Metal Oxide Semiconducting Sensing Layer Selectivity

著者名:

Dori,L.

掲載資料名:

Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999)

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3975

発行年:

2000

巻:

Part1

開始ページ:

675

終了ページ:

682

出版情報:

Bellingham, Wash.: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819436016 [0819436011]

言語:

英語

請求記号:

P63600/3975

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017117
シリーズID:	PA00000029
会議名:	International Workshop on the Physics of Semiconductor Devices
回次:	1999 : 10th
会議開催地:	Delhi, India
会議開催年:	1999.12.14-1999.12.18

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