Power Schottky Rectifiers and Microwave Transistors in 4H-SiC

Power Schottky Rectifiers and Microwave Transistors in 4H-SiC

著者名:

掲載資料名:

Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999)

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3975

発行年:

2000

巻:

Part1

開始ページ:

668

終了ページ:

671

出版情報:

Bellingham, Wash.: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819436016 [0819436011]

言語:

英語

請求記号:

P63600/3975

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017117
シリーズID:	PA00000029
会議名:	International Workshop on the Physics of Semiconductor Devices
回次:	1999 : 10th
会議開催地:	Delhi, India
会議開催年:	1999.12.14-1999.12.18

類似資料:

1 国際会議録 Physical Simulations on the Operation of 4H-SiC Microwave Power Transistors Jonsson, R., Wahab, Q., Rudner, S. Trans Tech Publications	7 国際会議録 Improvements in the Electrical Performance of High Voltage 4H-SiC Schottky Diodes by Hydrogen Annealing Wahab, Q.u., Macak, E.B., Zhang, J., Madsen, L.D., Janzen, E. Trans Tech Publications
2 国際会議録 Performance of SiC Microwave Transistors in Power Amplifiers S. Azam, R. Jonsson, E. Janzen, Q. Wahab Materials Research Society	8 国際会議録 Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-Voltage 4H-SiC Schottky Diodes Wahab, Q., Ellison, A., Hallin, C., Henry, A., Persio, J. Di, Martinez, R., Janzen, E. Trans Tech Publications
3 国際会議録 DC and RF Performance of Insulating Gate 4H-SiC Depletion Mode Field Effect Transistors Jonsson, R., Wahab, Q., Rudner, S. Trans Tech Publications	9 国際会議録 Evaluation of SiC MESFET Structures Using Large-Signal Time-Domain Simulations Jonsson, R., Eriksson, J., Wahab, Q., Rudner, S., Rorsman, N., Zirath, H., Svensson, C. Trans Tech Publications
4 国際会議録 Electroluminescence from 4H-SiC Schottky Diodes Carlsson, F.H.C., ul-Wahab, Q., Bergman, P.J., Janzen, E. Materials Research Society	10 国際会議録 Evaluation of SiC MESFET Structures Using Large-Signal Time-Domain Simulations Jonsson, Rolf, Eriksson, Joakim, Wahab, Q., Rudner, S., Rorsman, N., Zirath, H., Svensson, C. Trans Tech Publications
5 国際会議録 Designing, Physical Simulation and Fabrication of High-Voltage (3.85 kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall and Chimney CVD Films Wahab, Q., Ellison, A., Zhang, J., Forsberg, U., Duranova, E., Henry, A., Madsen, L. D., Janzen, E. Trans Tech Publications	11 国際会議録 Simulation and Experimental Characteristics of 4H-SiC Schottky Power Rectifiers Nigam, S., Kim, J., Luo, B., Ren, F., Chung, G., MacMillan, M. F., Williams, J. R., Pearton, S. J. Electrochemical Society
6 国際会議録 A Comparison between Physical Simulations and Experimental Results in 4H-SiC MESFETs with Non-Constant Doping in the Channel and Buffer Layers Eriksson, J., Rorsman, N., Zirath, H., Jonsson, R., Wahab, Q.u., Rudner, S. Trans Tech Publications	12 国際会議録 High-Voltage(>2.5kV)4H-SiC Schottky Reetifiers Processed on Hot-Wall CVD and High-Temperature CVD Layers Kimoto,T., Wahab,Q., Ellison,A., Forsberg,U., Tuominen,M., Yakimova,R., Henry,A., Janzen,E. Trans Tech Publications

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