An Analytical Temperature Dependent Threshold Voltage Model for Thin Film Surrounded Gate SOI MOSFET
- 著者名:
- 掲載資料名:
- Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999)
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 3975
- 発行年:
- 2000
- 巻:
- Part1
- 開始ページ:
- 605
- 終了ページ:
- 608
- 出版情報:
- Bellingham, Wash.: SPIE - The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819436016 [0819436011]
- 言語:
- 英語
- 請求記号:
- P63600/3975
- 資料種別:
- 国際会議録
類似資料:
SPIE-The International Society for Optical Engineering |
SPIE - The International Society for Optical Engineering |
SPIE - The International Society for Optical Engineering |
SPIE - The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering, Narosa |
SPIE-The International Society for Optical Engineering |
10
国際会議録
Analytical 2-D Threshold Voltage Model for Short Channel MOSFET with Non-Uniformly Doped Substrate
SPIE-The International Society for Optical Engineering, Narosa |
5
国際会議録
An Accurate Model for Planar Doped In AIAsI InGaAslInP MODFETs for Microwave Circuit Applications
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering, Narosa |
SPIE-The International Society for Optical Engineering |
12
国際会議録
Saturation Drain Current and Substrate Current Model of Fully Overlapped Lightly Doped Drain MOSFET
SPIE-The International Society for Optical Engineering |