Blank Cover Image

Future Trends of III-Nitrides Using Lateral Epitaxial Overgrowth

著者名:
Razaghi,Manijeh
Kung,P.
Zhang,P.Sandvik X.
Mi,K.
Walker,D.
Kumar,V.
Diaz,J.
さらに 2 件
掲載資料名:
Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999)
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
3975
発行年:
2000
巻:
Part1
開始ページ:
197
終了ページ:
203
出版情報:
Bellingham, Wash.: SPIE - The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819436016 [0819436011]
言語:
英語
請求記号:
P63600/3975
資料種別:
国際会議録

類似資料:

1 国際会議録 Schottky MSM photodetectors on GaN films grown on sapphire by lateral epitaxial overgrowth

Kung,P., Walker,D., Sandvik,P., Hamilton,M., Diaz,J., Lee,I.-H., Razeghi,M.

SPIE - The International Society for Optical Engineering
7 国際会議録 Epitaxial lateral overgrowth of GaN by HVPE and MOVPE

Zhang, R., Gu, S.L., Lu, D.Q., Shen, B., Shi, Y., Zhang, L., Kuech, T.F., Boleslawski, M.P., Kuan, T.S., Zheng, Y.

SPIE-The International Society for Optical Engineering
2 国際会議録 Solar-blind Alx Ga1-x N p-i-n photodetectors grown on LEO and non-LEO GaN

Sandvik,P.M., Walker,D., Kung,P., Mi,K., Shahedipour,F., Kumar,V., Zhang,X., Diaz,J., Jelen,C.L., Razeghi,M.

SPIE - The International Society for Optical Engineering
8 国際会議録 New Developments in III-Nitride Material and Device Applications

Razeghi,M., Saxler,A., Kung,P., Walker,D., Zhang,X., Kim,K.S., Vydyanath,H.R., Solomon,J., Ahoujja,M., Mitchel,W.C.

Narosa Publishing House
3 国際会議録 LEO of ?-nitride on Al2O3 and Si substrates

Razeghi,M., Kung,P., Sandvik,P.M., Mi,K., Zhang,X., Dravid,V.P., Freitas,J.A.,Jr., Saxler,A.W.

SPIE - The International Society for Optical Engineering
9 国際会議録 Maskless lateral epitaxial overgrowth of GaN on sapphire

Fini, P., Marchand, H., Ibbetson, J. P., Moran, B., Zhao, L., DenBaars, S. P., Speck, J. S., Mishra, U. K.

MRS-Materials Research Society
4 国際会議録 Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using a Two-Step Process

Marchand, H., Ibbetson, J. P., Fini, P. T., Wu, X. H., Keller, S., DenBaars, S. P., Speck, J. S., Mishra, U. K.

MRS - Materials Research Society
10 国際会議録 Synchrotron X-ray topography studies of epitaxial lateral overgrowth of GaN on sapphire

McNally, P. J., Tuomi, T., Rantamaki, R., Jacobs, K., Considine, L., O'Hare, M., Lowney, D., Danilewsky, A. N.

MRS-Materials Research Society
5 国際会議録 Recent advances in III-nitride materials: characterrization and device applications (Invited Paper)

Razeghi,M., Zhang,X., Kung,P., Saxier,A., Walker,D., Lim,K. Y., Kim,K. S.

SPIE-The International Society for Optical Engineering
11 国際会議録 Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates

Yu, Z., Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Muth, J. F., Cook, J. W., Jr., Schetzina, J. F., Haberern, K. …

MRS - Materials Research Society
6 国際会議録 AlxGa1-xN p-i-n photodiodes on sapphire substrates

Walker,D., Kung,P., Sandvik,P., Wu,J.-J., Hamilton,M., Lee,I.-H., Diaz,J., Razeghi,M.

SPIE - The International Society for Optical Engineering
12 国際会議録 Electroluminescence of 111-nitride double heterostructure light emitting diodes with silicon and magnesium doped InGaN

Saxler,A., Kim,K.S., Walker,D., Kung,P., Zhang,X., Brown,G.J., Mitchel,W.C., Razeghi,M.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12