The Growth of Homoepitaxial Silicon at Low Temperatures Using Hot Wire Chemical Vapor Deposition

The Growth of Homoepitaxial Silicon at Low Temperatures Using Hot Wire Chemical Vapor Deposition

著者名:

Thiesen, J.

掲載資料名:

Epitaxial growth - principles and applications : symposium held April 5-8, 1999, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

570

発行年:

1999

開始ページ:

261

出版情報:

Warrendale, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994775 [1558994777]

言語:

英語

請求記号:

M23500/570

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017067
シリーズID:	PA00000011
会議名:	Symposium on epitaxial growth-principles and applications
回次:	1999
会議開催地:	San Francisco, CA, USA
会議開催年:	1999.04.05-1999.04.08

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