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The Impact of Rapid Thermal Annealing on the Properties of the Si (100)-SiO2 Interface

著者名:
Hurley, P. K.
Leveugle, C.
Mathewson, A.
Doyle, D.
Whiston, S.
Prendergast, J.
Lundgren, P.
さらに 2 件
掲載資料名:
Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
510
発行年:
1998
開始ページ:
659
出版情報:
Warrendale, Pa: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994164 [1558994165]
言語:
英語
請求記号:
M23500/510
資料種別:
国際会議録

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