Blank Cover Image

Phosphorus Passivation of GaAs

著者名:
Watkins, S. P.
Xu, X.
Hu, J.
Ares, R.
Yeo, P.
Harrison, D. A.
Thewalt, M. L. W.
Bolognesi, C. R.
Springthorpe, A. J.
さらに 4 件
掲載資料名:
Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
510
発行年:
1998
開始ページ:
647
出版情報:
Warrendale, Pa: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994164 [1558994165]
言語:
英語
請求記号:
M23500/510
資料種別:
国際会議録

類似資料:

1 国際会議録 Enhanced Breakdown Voltages in Planar GaAs MESFETs with a Thin GaInP Passivation Layer

Bolognesi, C.R., Dvorak, M.W., Soerensen, G., Watkins, S.P.

Electrochemical Society
7 国際会議録 GROWTH AND PHOTOLUMINESCENCE OF STRAINED <110> Si/Si1-xGex/Si QUANTUM WELLS GROWN BY RAPID THERMAL CHEMICAL VAPOR DEPOSITION

Liu, C. W., Sturm, J. C., Lacroix, Y. R. J., Thewalt, M. L. W., Perovic, D. D.

MRS - Materials Research Society
2 国際会議録 RAPID THERMAL ANNEALING OF GaAs/A1GaAs COUPLED DOUBLE QUANTUM WELLS

Koteles, Emil S., Elman, B., Armiento, C. A., Melman, P., Chi, J. Y., Holmstrom,. R. J., Powers, J., Owens, D., …

Materials Research Society
8 国際会議録 Annealing studies of Er-implanted GaAs and the excitation mechanism of Er in GaAs

Elsaesser, D. W., Colon, J. E., Yeo, Y. K., Hengehold, R. L., Pomrenke, G. S.

MRS - Materials Research Society
3 国際会議録 Passivation of shallow acceptors in Si and GaAs by annealing in H2

Veloarisoa,I.A., Kozuch,D.M., Stavola,M., Peale,R.E., Watkins,G.D., Pearton,S.J., Abernathy,C.R., Hobson,W.S.

Trans Tech Publications
9 国際会議録 PHOTOLUMINESCENCE OF THIN Si1-XGeX QUANTUM WELLS

Lenchyshyn, L.C., Thewalt, M.L.W., Houghton, D.C., Noel, J.-P., Rowell, N.L., Sturm, J.C., Xiao, X.

Materials Research Society
4 国際会議録 OPTICAL PROPERTIES AND ELECTROLUMINESCENCE OF ORDERED AND DISORDERED AlAs/GaAs SUPERLATTICES

Arent, D. J., Alonso, R. G., Horner, G. S., Kibbler, A. E., Olson, J. M., Yin, X., Delong, M. C., Springthorpe, A. J., …

MRS - Materials Research Society
10 国際会議録 The Effect of Low-Temperature GaAs Nucleation on the Growth of GaN on Silicon(001) During MOVPE Process

Zheng, L. X., Liang, J. W., Yang, H., Li, J. B., Wang, Y. T., Xu, D. P., Li, X. F., Duan, L. H., Hu, X. W.

MRS - Materials Research Society
5 国際会議録 InGaP/GaAs HBT grown by solid-source molecular-beam epitaxy with a GaP decomposition source

Niu, P.J., Hu, H., Shang, X., Wu, S., Guo, W., Miao, C, Li, X., Xu, Z., Qu, D.

SPIE - The International Society of Optical Engineering
11 国際会議録 Athermal Annealing of Silicon Implanted with Phosphorus and Arsenic

Grun, J., Fischer, R.P., Peckerar, M., Felix, C.L., Covington, B.C., Donnelly, D.W., Boro Djordjevic, B., Mignogna, R., …

Electrochemical Society
6 国際会議録 In Situ Phosphorus Doping of Si and Si1-xGex Epitaxial Layers by RTP/VLP-CVD

Huang,X.-D., Han,P., Shi,Y., Zheng,Y.-D., Hu,L.-Q., Wang,R.-H., Zhu,S.-M.

Trans Tech Publications
12 国際会議録 THz quantum semiconductor devices [6029-01]

Liu H. C., Luo H., Ban D., Wachter M., Song C. Y., Wasilewski Z. R., Buchanan M., Aers G. C., SpringThorpe A. J., Cao J. …

SPIE - The International Society of Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12