Electrical Characterization of 1 KeV He-, Ne-, and Ar-Ion Bombarded n-Si Using Deep Level Transient Spectroscopy

Electrical Characterization of 1 KeV He-, Ne-, and Ar-Ion Bombarded n-Si Using Deep Level Transient Spectroscopy

著者名:

掲載資料名:

Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

510

発行年:

1998

開始ページ:

519

出版情報:

Warrendale, Pa: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994164 [1558994165]

言語:

英語

請求記号:

M23500/510

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017062
シリーズID:	PA00000011
会議名:	Symposium on defect and impurity engineered semiconductors
回次:	2nd
会議開催地:	San Francisco, CA, USA
会議開催年:	1998.04.13-1998.04.17

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