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A Nonvolatile MOSFET Memory Device Based on Mobile Protons in the Gate Dielectric

著者名:
Vanheusden, K.
Warren, W. L.
Fleetwood, D. M.
Devine, R. A. B.
Draper, B. L.
Schwank, J. R.
Shaneyfelt, M. R.
Winokur, P. S.
さらに 3 件
掲載資料名:
Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
510
発行年:
1998
開始ページ:
463
出版情報:
Warrendale, Pa: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994164 [1558994165]
言語:
英語
請求記号:
M23500/510
資料種別:
国際会議録

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