Schottky-Barrier Modification of Low-Energy Ar-Ion Bombarded GaAs and Si

Schottky-Barrier Modification of Low-Energy Ar-Ion Bombarded GaAs and Si

著者名:

掲載資料名:

Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

510

発行年:

1998

開始ページ:

443

出版情報:

Warrendale, Pa: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994164 [1558994165]

言語:

英語

請求記号:

M23500/510

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017062
シリーズID:	PA00000011
会議名:	Symposium on defect and impurity engineered semiconductors
回次:	2nd
会議開催地:	San Francisco, CA, USA
会議開催年:	1998.04.13-1998.04.17

類似資料:

1 国際会議録 Electrical Characterization of 1 KeV He-, Ne-, and Ar-Ion Bombarded n-Si Using Deep Level Transient Spectroscopy Deenapanray, P. N. K., Auret, F. D., Ridgway, M. C., Goodman, S. A., Myburg, G. MRS - Materials Research Society	7 国際会議録 A DLTS Investigation on the Effect of Ion Mass, Fluence and Energy on the Introduction of a Higher-Order Vacancy Cluster in Noble Gas Ion Bombarded n-Si Deenapanray, P. N. K., Williams, J. S. MRS - Materials Research Society
2 国際会議録 Electrical and Defect Characterization of Sputter Deposited Au and Cr Schottky Barrier Diodes on GaAs Goodman,S.A., Auret,F.D., Clerc,Y.Le Trans Tech Publications	8 国際会議録 Electrical characterization ofelectron beam induced defects in epitaxially grown Si1-xGex Mamor,M., Auret,F.D., Goodman,S.A., Myburg,G., Deenapanray,P.N.K., Meyer,W.E. Trans Tech Publications
3 国際会議録 Electrical and optical characterisation of defects iuduced in epitaxially grown n-Si during 1 keV noble gas ion bombardment Deenapanray,P.N.K., Auret,F.D., Myburg,G., Meyer,W.E., Goodman,S.A. Trans Tech Publications	9 国際会議録 Electrical characterization of defects introduced during plasma-based processing of GaAs Auret,F.D., Goodman,S.A., Myburg,G., Meyer,W.E., Deenapanray,P.N.K., Murtagh,M., Ye,S.-R., Masterson,H.J., … Trans Tech Publications
4 国際会議録 Electronic properties of defects introduced in n- and p-type Si1-xGex during ion etching Goodman,S.A., Auret,F.D., Mamor,M., Deenapanray,P.N.K., Meyer,W.E. Trans Tech Publications	10 国際会議録 Electrical Characterization of Defects Introduced in n-GaN During High Energy Proton and He-Ion Irradiation Goodman, S. A., Auret, F. D., Koschnick, F. K., Spaeth, J-M., Beaumont, B., Gibart, P. MRS - Materials Research Society
5 国際会議録 Defect Formation by Low Energy Ions during Sputter Deposition of TiW and Au on Epitaxially Grown n-Si at Different Plasma Pressures Deenapanray,P.N.K., Auret,F.D., Myburg,G., Hayes,M., Meyer,W.E., Schutte,C. Trans Tech Publications	11 国際会議録 Defect Engineering and Atomic Relocation Processes in Impurity-Free Disordered GaAs and AlGaAs Deenapanray, P.N.K., Krispin, M., Meyer, W.E., Tan, H.H., Jagadish, C., Auret, F.D. Materials Research Society
6 国際会議録 Optical and Electrical Characterization Study of SiCl4 Reactive-Io-Etched GaAs Murtagh, M., Ye, Shu-Ren, Masterson, H. J., Beechinor, J. T., Crean, G. M., Auret, F. D., Deenapanray, P. N. K., Mayer, … MRS - Materials Research Society	12 国際会議録 Electrical Characterization of Defects Introduced During Plasma-Based Processing of GaAs Auret, F. D., Myburg, G., Meyer, W. E., Deenapanray, P. N. K., Nordhoff, H., Murtagh, M., Ye, Shu-Ren, Masterson, H. J., … MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12