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Simulation of Under- and Supersaturation of Gallium Vacancies in Gallium Arsenide During Silicon In- and Outdiffusion

著者名:
掲載資料名:
Semiconductor process and device performance modeling : symposium held December 2-3, 1997, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
490
発行年:
1998
開始ページ:
99
出版情報:
Warrendale, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993952 [1558993959]
言語:
英語
請求記号:
M23500/490
資料種別:
国際会議録

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