Atomic Dynamics During Silicon Oxidation and the Nature of Defects at the Si-SiO2 Interface

Atomic Dynamics During Silicon Oxidation and the Nature of Defects at the Si-SiO2 Interface

著者名:

掲載資料名:

Semiconductor process and device performance modeling : symposium held December 2-3, 1997, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

490

発行年:

1998

開始ページ:

59

出版情報:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993952 [1558993959]

言語:

英語

請求記号:

M23500/490

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017060
シリーズID:	PA00000011
会議名:	Symposium on semiconductor process and device performance modelling
回次:	1997
会議開催地:	Boston, MA, USA
会議開催年:	1997.12.02-1997.12.03

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