Extending the Use of NO Dielectrics for DRAM by Ultrathin Silicon Nitride RTCVD With In Situ Ammonia and Hydrogen Predeposition Surface Conditioning

Extending the Use of NO Dielectrics for DRAM by Ultrathin Silicon Nitride RTCVD With In Situ Ammonia and Hydrogen Predeposition Surface Conditioning

著者名:

Tiner, Paul A.

Violette, Katherine E.

Wise, Rick L.

さらに 2 件

掲載資料名:

Rapid thermal and integrated processing VI : symposium held April 1-4, 1997, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

470

発行年:

1997

開始ページ:

387

出版情報:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993747 [1558993746]

言語:

英語

請求記号:

M23500/470

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017058
シリーズID:	PA00000011
会議名:	Symposium on rapid thermal and integrated processing
回次:	6th
会議開催地:	San Francisco, CA, USA
会議開催年:	1997.04.01-1997.04.04

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