Mechanisms of Thin Film Ti and Co Silicide Phase Formation on Deep-Sub-Micron Geometries and Their Implications and Applications to 0.18 ヲフm CMOS and Beyond
- 著者名:
- 掲載資料名:
- Advanced metallization for future ULSI : symposium held April 8-11, 1996, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 427
- 発行年:
- 1996
- 開始ページ:
- 505
- 出版情報:
- Pittsburgh, Pa.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558993303 [1558993304]
- 言語:
- 英語
- 請求記号:
- M23500/427
- 資料種別:
- 国際会議録
類似資料:
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
MRS - Materials Research Society |
SPIE-The International Society for Optical Engineering |
MRS - Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
SPIE - The International Society for Optical Engineering |
MRS - Materials Research Society |
11
国際会議録
Tuned MEDICI simulator including inverse short channel effect for sub-0.18-ヲフm CMOS technologies
SPIE-The International Society for Optical Engineering |
MRS - Materials Research Society |
12
国際会議録
Optimum junction depth design of the S/D extension regions (MDD) for sub-0.18-ヲフm CMOS technologies
SPIE-The International Society for Optical Engineering |