Ultra-Low Contact Resistivity by High Concentration Germanium and Boron Ion Implantation Combined with Low Temperature Annealing

Ultra-Low Contact Resistivity by High Concentration Germanium and Boron Ion Implantation Combined with Low Temperature Annealing

著者名:

掲載資料名:

Advanced metallization for future ULSI : symposium held April 8-11, 1996, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

427

発行年:

1996

開始ページ:

153

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993303 [1558993304]

言語:

英語

請求記号:

M23500/427

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017054
シリーズID:	PA00000011
会議名:	Symposium on advanced metallization for future ulsi
回次:	1996
会議開催地:	San Francisco, CA, USA
会議開催年:	1996.04.08-1996.04.11

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