In-Situ Monitoring of MOCVD Grown InxAl1-xAs/GaAs Epitaxial Layers by Two Laser Beams Reflectometry

In-Situ Monitoring of MOCVD Grown InxAl1-xAs/GaAs Epitaxial Layers by Two Laser Beams Reflectometry

著者名:

掲載資料名:

Diagnostic techniques for semiconductor materials processing II : symposium held November 27-30, 1995, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

406

発行年:

1996

開始ページ:

115

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993099 [1558993096]

言語:

英語

請求記号:

M23500/406

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017052
シリーズID:	PA00000011
会議名:	Symposium on diagnostic techniques for semiconductor materials processing
回次:	2nd
会議開催地:	Boston, MA, USA
会議開催年:	1995.11.27-1995.11.30

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