A Novel Etching Method of Single Crystalline Al2O3 Film on Si and Sapphire Using Si Ion Implantation
- 著者名:
- 掲載資料名:
- Ion-solid interactions for materials modification and processing : symposium held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 396
- 発行年:
- 1996
- 開始ページ:
- 267
- 出版情報:
- Pittsburgh: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558992993 [1558992995]
- 言語:
- 英語
- 請求記号:
- M23500/396
- 資料種別:
- 国際会議録
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12
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Structural and Electrical Properties of Poly-3C-SiC Layer Obtained from P Ion Implanted 4H-SiC
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