Recombination at Oxidation Induced Stacking Faults in Silicon

Recombination at Oxidation Induced Stacking Faults in Silicon

著者名:

掲載資料名:

Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

378

発行年:

1995

開始ページ:

995

出版情報:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992818 [1558992812]

言語:

英語

請求記号:

M23500/378

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017050
シリーズID:	PA00000011
会議名:	Symposium on defect and impurity engineered semiconductors and devices
回次:	1995
会議開催地:	San Francisco, CA, USA
会議開催年:	1995.04.17-1995.04.21

類似資料:

1 国際会議録 USE OF POROUS SILICON TO MINIMIZE OXIDATION INDUCED STACKING FAULT DEFECTS IN SILICON Shieh, S. -Y, Evans, J. W,. Materials Research Society	7 国際会議録 OXIDATION-INDUCED STACKING FAULTS IN NITROGEN DOPED CZOCHRALSKI SILICON Yang, D., Chu, J., Ma, X., Li, L., Que, D. Electrochemical Society
2 国際会議録 Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC Diodes Liu, J.Q., Skowronski, M., Hallin, C., Soderholm, R., Lendenmann, H. Trans Tech Publications	8 国際会議録 OXIDATION-INDUCED STACKING FAULTS IN NITROGEN DOPED CZOCHRALSKI SILICON Yang, D., Chu, J., Ma, X., Li, L., Que, D. Electrochemical Society
3 国際会議録 Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC Diodes Liu, J.Q., Skowronski, M., Hallin, C., Soederholm, R., Lendenmann, H. Trans Tech Publications	9 国際会議録 THE BEHAVIOR OF OXIDATION STACKING FAULTS DURING O2/NF3 OXIDATION OF SILICON Kim, U. S., Jaccodine, R. J. Materials Research Society
4 国際会議録 A MODEL FOR THE DENSITY OF OXIDATION INDUCED STACKING FAULTS IN SILICON. KUPER,F.G., HOSSON,J.Th.M.DE, VERWEY,J.F. Trans Tech Publications	10 国際会議録 Dopant Diffusion and Stacking Fault in Silicon during Thermal Oxidation Okino,T., Takaue,R., Onishi,M. Trans Tech Publications
5 国際会議録 Effect of Recombination-Induced Stacking Faults on Majority Carrier Conduction and Reverse Leakage Current on 10 kV SiC DMOSFETs S.H. Ryu, F. Husna, S.K. Haney, Q.C.J. Zhang, R.E. Stahlbush Trans Tech Publications	11 国際会議録 Oxygen, oxidation stacking faults, and related phenomena in silicon Hu, S.M. North Holland
6 国際会議録 Generation of Oxidation Induced Stacking Faults in CZ Silicon Wafers Sueoka,K., Akatsuka,M., Nishihara,K., Yamamoto,T., Kobayashi,S. Trans Tech Publications	12 国際会議録 STACKING-FAULT ENERGIES IN SILICON, DIAMOND, AND SILICON CARBIDE Denteneer, P. J. H. Materials Research Society

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