Low Temperature Anneal of the Divacancy in P-Type Silicon
- 著者名:
Trauwaert, M.-A. Vanhellemont, J. Maes, H. E. Bavel, A.-M. Van Langouche, G. Stesmans, A. Clauws, P. - 掲載資料名:
- Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 378
- 発行年:
- 1995
- 開始ページ:
- 953
- 出版情報:
- Pittsburgh, PA: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558992818 [1558992812]
- 言語:
- 英語
- 請求記号:
- M23500/378
- 資料種別:
- 国際会議録
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10
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