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Radiative Recombination Processes in Boron Modulation-Doped SiGe Quantum Wells

著者名:
Buyanova, I. A.
Chen, W. M.
Henry, A.
Ni, W. X.
Hansson, G. V.
Monemar, B.
さらに 1 件
掲載資料名:
Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
378
発行年:
1995
開始ページ:
881
出版情報:
Pittsburgh, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992818 [1558992812]
言語:
英語
請求記号:
M23500/378
資料種別:
国際会議録

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