SF6/O2 and CF4/O2 Reactive-Ion-Etching-Induced Defects in Silicon Studied by Photoluminescence Spectroscopy:Role of Oxygen
- 著者名:
Buyanova,I.A. Henry,A. Monemar,B. Lindstrom,J.L. Sheinkman,M.K. Oehrlein,G.S. - 掲載資料名:
- Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 196-201
- 発行年:
- 1995
- パート:
- 4
- 開始ページ:
- 1807
- 終了ページ:
- 1812
- 出版情報:
- Zurich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878497164 [0878497161]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
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