Quantum Yield of Band-Edge Emission between 77 and 300 K of Undoped and Nitrogest-Doped ZnSe Epilayers Grown by MOVPE

Quantum Yield of Band-Edge Emission between 77 and 300 K of Undoped and Nitrogest-Doped ZnSe Epilayers Grown by MOVPE

著者名:

Gurskii,A.L.

掲載資料名:

II-VI compounds and semimagnetic semiconductors : joint proceedings of the Third European Workshop on II-VI Compounds, Linz, Austria, 26-28 September 1994, and the Fourth International Workshop on Semimagnetic (Diluted Magnetic) Semiconductors, Linz, Austria, 26-28 September 1994

シリーズ名:

Materials science forum

シリーズ巻号:

182-184

発行年:

1995

開始ページ:

243

終了ページ:

246

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878496891 [0878496890]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00016966
シリーズID:	PA00000012
会議名:	European Workshop on II-VI Compounds ; International Workshop on Semimagnetic (Diluted Magnetic) Semiconductors
回次:	3rd ; 4th
会議開催地:	Linz, Austria
会議開催年:	1994.09.26-1994.09.28

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