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Enhanced poly gate critical dimension control by using a SiOxNy ARC film

著者名:
Bencher,C ( Applied Materials Southeast Asia Pte. Ltd. (Singapore) )
Chu,T. ( Applied Materials Southeast Asia Pte. Ltd. (Singapore) )
Tan,W.T. ( Applied Materials Southeast Asia Pte. Ltd. (Singapore) )
Zou,G. ( Applied Materials Southeast Asia Pte. Ltd. (Singapore) )
Lin,Q.Y. ( Chartered Semiconductor Manufacturing Ltd. (Singapore) )
Yi,X. ( Chartered Semiconductor Manufacturing Ltd. (Singapore) )
Dong,W. X. ( Chartered Semiconductor Manufacturing Ltd. (Singapore) )
Wen,M. W. ( Chartered Semiconductor Manufacturing Ltd. (Singapore) )
さらに 3 件
掲載資料名:
Microlithographic Techniques in IC Fabrication
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
3183
発行年:
1997
開始ページ:
255
終了ページ:
262
出版情報:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819426109 [0819426105]
言語:
英語
請求記号:
P63600/3183
資料種別:
国際会議録

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