Novel method to calculate the probability of silicon damage of DRAM based on the process control capability

Novel method to calculate the probability of silicon damage of DRAM based on the process control capability

著者名:

King,M. ( Taiwan Semiconductor Manufacturing Co.,Ltd. )
Leu,J.-C. ( Taiwan Semiconductor Manufacturing Co.,Ltd. )
Chen,S.-S. ( Taiwan Semiconductor Manufacturing Co.,Ltd. )
Chao,Y.-C. ( Taiwan Semiconductor Manufacturing Co.,Ltd. )

掲載資料名:

In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3215

発行年:

1997

開始ページ:

158

終了ページ:

166

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819426475 [0819426474]

言語:

英語

請求記号:

P63600/3215

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00016931
シリーズID:	PA00000029
会議名:	Microelectronic Manufacturing : In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing
回次:	1997
会議開催地:	Austin, TX, USA
会議開催年:	1997.10.01-1997.10.02

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