Influence of oxygen precipitates on the measurement of minority carrier diffusion length in p-type silicon material using surface photovoltage technique

Influence of oxygen precipitates on the measurement of minority carrier diffusion length in p-type silicon material using surface photovoltage technique

著者名:

Ma,Y. ( Lucent Technologies Bell labs. )

Lee,J.L. ( Lucent Technologies Bell labs. )

Benton,J.L. ( Lucent Technologies Bell labs. )

Boone,T. ( Lucent Technologies Bell labs. )

Eaglesham,D.J. ( Lucent Technologies Bell labs. )

Higashi,G.S. ( Lucent Technologies Bell labs. )

さらに 1 件

掲載資料名:

In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3215

発行年:

1997

開始ページ:

17

終了ページ:

24

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819426475 [0819426474]

言語:

英語

請求記号:

P63600/3215

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00016931
シリーズID:	PA00000029
会議名:	Microelectronic Manufacturing : In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing
回次:	1997
会議開催地:	Austin, TX, USA
会議開催年:	1997.10.01-1997.10.02

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