Characterisation of Ion Implanted Layers in GaAs and Influence of Various Parameters on Device Performance
- 著者名:
Bhattacharya,B. Sai Saravanan,G. Khatri,R.K. Naik,A.A. Rawal,D.S. Sharma,H.S. Sehgal,B.K. Gulati,R. Vyas,H.P. Kumar,K.C. Rao,A.V.S.K. Govindacharyulu,P.A. - 掲載資料名:
- Physics of - Semiconductor Devices -
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 3316
- 発行年:
- 1998
- 巻:
- Part 2
- 開始ページ:
- 1310
- 終了ページ:
- 1313
- 出版情報:
- New Delhi: Narosa Publishing House
- ISSN:
- 0277786X
- ISBN:
- 9780819427564 [081942756X]
- 言語:
- 英語
- 請求記号:
- P63600/3316
- 資料種別:
- 国際会議録
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10
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A High Yield Lift-off Process for Interconnect Formation for mm-Wave GaAs Beam Lead Schottky Diodes
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