A New Analytical 2-D Potential Distribution Model in Subthreshold Region including DIBL in Short Channel MOSFET

A New Analytical 2-D Potential Distribution Model in Subthreshold Region including DIBL in Short Channel MOSFET

著者名:

掲載資料名:

Physics of - Semiconductor Devices -

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3316

発行年:

1998

巻:

Part 2

開始ページ:

1039

終了ページ:

1043

出版情報:

New Delhi: Narosa Publishing House

ISSN:

0277786X

ISBN:

9780819427564 [081942756X]

言語:

英語

請求記号:

P63600/3316

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00016921
シリーズID:	PA00000029
会議名:	International Workshop on the Physics of Semiconductor Devices - IWDPSD
回次:	1997 : 9th
会議開催地:	Delhi, India
会議開催年:	1997.12.16-1997.12.20

類似資料:

1 国際会議録 Analytical 2-D Threshold Voltage Model for Short Channel MOSFET with Non-Uniformly Doped Substrate Bhatia,Manju, Sood,Rachna, Gupta,R.S. SPIE-The International Society for Optical Engineering, Narosa	7 国際会議録 Analytical Modelling of Threshold Voltage and Drain Current in Short Channel Fully Depleted Cylindrical Gate MOSFET Gupta,P.S., Kranti,Abhinav, Haldar,S. SPIE - The International Society for Optical Engineering
2 国際会議録 A Model for Subthreshold Behaviour of Short Channel Poly-Si Thin Film Transistor Chopra,Sonia, Gupta,R.S. SPIE - The International Society for Optical Engineering	8 国際会議録 An Analytical Temperature Dependent Threshold Voltage Model for Thin Film Surrounded Gate SOI MOSFET Kranti,Abhinav, Haldar,Subhasis, Gupta,R.S. SPIE - The International Society for Optical Engineering
3 国際会議録 A New Analytical MOSFET Model for VLSI Thomas,Ciby, Khanna,Manoj K., Haldar,S., Gupta,R.S. SPIE-The International Society for Optical Engineering, Narosa	9 国際会議録 A New Quasi-static Model for Short-channel MOSFETs Prashant Damle, Parikh,Chetan D. Narosa Publishing House
4 国際会議録 Threshold Voltage Model for Short Channel Retrograde Doped MOSFETs Kranti, Abhinav, Rashmi, Haldar, S., Gupta, R.S. SPIE-The International Society for Optical Engineering	10 国際会議録 Analytical Model for Field Distribution and Capacitance-Voltage Characteristics of Pseudomorphic(AlGaAs/InGaAs)Modulation Doped Field Effect Transistor Agrawal,Anju, Goswami,Anisha, Sen,Sujata, Gupta,R.S. SPIE - The International Society for Optical Engineering
5 国際会議録 Analytical model for subthreshold current in short-channel fully depleted SOI MOSFETs incorporating velocity overshoot Alam,A.H.M.Z., Momen,Md.F., Islam,M.S., Saha,P.K. SPIE-The International Society for Optical Engineering	11 国際会議録 A Fringing Field Dependent Id-Vd Model for Small Geometry n-MOSFETS Rubeena Saleem, Gupta,R.S. Narosa Publishing House
6 国際会議録 Drain Induced Barrier Lowering - A Short Channel Effect,in a Double-Gate SOI MOSFET Pandey,Manoj K., Sujata Sen, Gupta,R.S. Narosa Publishing House	12 国際会議録 Analytical Model for C-V Characteristics of GaN MESFET for Microwave Frequency Applications Adarsh, Bose, Srikanta, Gupta, Mridula, Gupta, R.S. SPIE-The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12