A. Comparison of C-V and I-V Characteristics of Partially and Fully Depleted Gate-Controlled Diodes
- 著者名:
- 掲載資料名:
- Physics of - Semiconductor Devices -
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 3316
- 発行年:
- 1998
- 巻:
- Part 2
- 開始ページ:
- 1006
- 終了ページ:
- 1009
- 出版情報:
- New Delhi: Narosa Publishing House
- ISSN:
- 0277786X
- ISBN:
- 9780819427564 [081942756X]
- 言語:
- 英語
- 請求記号:
- P63600/3316
- 資料種別:
- 国際会議録
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4
国際会議録
Comparison of partially and fully depleted SOI transistors down to the sub 50-nm-gate length regime
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