Electrical and Optical Studies on LT GaAs Grown by Molecular Beam Epitaxy

Electrical and Optical Studies on LT GaAs Grown by Molecular Beam Epitaxy

著者名:

掲載資料名:

Physics of - Semiconductor Devices -

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3316

発行年:

1998

巻:

Part 1

開始ページ:

333

終了ページ:

335

出版情報:

New Delhi: Narosa Publishing House

ISSN:

0277786X

ISBN:

9780819427564 [081942756X]

言語:

英語

請求記号:

P63600/3316

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00016921
シリーズID:	PA00000029
会議名:	International Workshop on the Physics of Semiconductor Devices - IWDPSD
回次:	1997 : 9th
会議開催地:	Delhi, India
会議開催年:	1997.12.16-1997.12.20

類似資料:

1 国際会議録 Temperature Dependent Photoluminescence Studies of Molecular Beam Epitaxy Grown Silicon S-Doped Pseudomorphic AIGaAs/InGaAs/GaAs Quantum Wells Srinivasan, T., Muralidharan, R., Singh, S.N., Mehta, S.K., Jain, R.K. SPIE-The International Society for Optical Engineering	7 国際会議録 Optimization of Separate Confinement Heterostructure Waveguide for Quantum Well Lasers Jain, Alok, Mehta, S.K., Jain, R.K. SPIE-The International Society for Optical Engineering
2 国際会議録 Study of Effect of Indium Segregatibn and Desorption on the GaAs/InGaAs Strained Layer Multiquantum Wells by Photoluminescence Srinivasan,T., Muralidharan,R., Mehta,S.K., Jain,B.P., Jain,R.K. Narosa Publishing House	8 国際会議録 ELECTRICAL PROPERTIES OF HEAVILY Be-DOED GaAs GROWN BY MOLECULAR BEAM EPITAXY Shibata, H., Makita, Y., Yamada, A., Ohnishi, N., Mori, M., Nakayama, Y., Beye, A.C., Mayer, K.M., Takahashi, T., … Materials Research Society
3 国際会議録 Photoreflectance Spectroscopy of Molecular Beam Epitaxy Grown AlxGa1-xAs/GaAs Modulation Doped Heterostructure Srinivasan,T., Muralidharan,R., Jain,R.K., Mokerov,V.G. Narosa Publishing House	9 国際会議録 Effect of Heavy Doping on the Electroluminescence of GaAs p-n Junction Grown Using Metalorganic Vapour Phase Epitaxy Tyagi,R., Padmavati,M.V.G., Singh,M., Purohit,R.K., Agarwal,S.K. SPIE-The International Society for Optical Engineering, Narosa
4 国際会議録 Microstructural Characterization of MBE Grown Quantum Well Structures by Cross Sectional Transmission Electron Microscopy Rao,D.V.Sridhara, Muraleedharan,K., Dey,G.K., Mehta,S.K., Srinivasan,T., Muralidharan,R., Jain,B.P., Jain,R.K., Kumar,V. SPIE - The International Society for Optical Engineering	10 国際会議録 COMPARISON OF THE GaAs LAYERS GROWN ON POROUS Si AND ON Si BY MOLECULAR BEAM EPITAXY Wu, B. J., Wang,, K. L., Mii, Y. J,, Yoon, Y. S., Wu,. A. T., George,T.,, Weber, E. Materials Research Society
5 国際会議録 Temperature And Excitation Power Dependence of Bi-Excitonic Luminescence in InGaAs/GaAs Multiple Quantum Wells Gopalakrishna Naik, K., Rao, K.S.R.K., Murthy, L.C.S., Srinivasan, T., Muralidharan, R., Mehta, S.K., Jain, R.K., Kumar, … SPIE-The International Society for Optical Engineering	11 国際会議録 Amorphous Silicon Films And Superlattices Grown By Molecular Beam Epitaxy: An Optical Analysis Lockwood, D.J., Baribeau, J.-M., Noel, M., Zwinkels, J.C., Fogal, B.J., Orapunt, F., O'Leary, S.K. Materials Research Society
6 国際会議録 Growth and Characterization of SQW SCH Laser for Emission at 808 nm Mehta,S.K., Srinivasan,T., Dhaul,Anuradha, Aggarwal,Vanita, Jain,R.K. SPIE-The International Society for Optical Engineering, Narosa	12 国際会議録 Electrical Properties for InN Grown by Molecular Beam Epitaxy Schaff, W.J., Lu, H., Eastman, L. F., Walukiewicz, W., Man Yu, K., Keller, S., Kurtz, S., Keyes, B., Gevila, L. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12