Doping Behaviour of In0.53Ga0.47As and InP Grown by Metalorganic Vapour Phase Epitaxy

Doping Behaviour of In0.53Ga0.47As and InP Grown by Metalorganic Vapour Phase Epitaxy

著者名:

掲載資料名:

Physics of - Semiconductor Devices -

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3316

発行年:

1998

巻:

Part 1

開始ページ:

289

終了ページ:

292

出版情報:

New Delhi: Narosa Publishing House

ISSN:

0277786X

ISBN:

9780819427564 [081942756X]

言語:

英語

請求記号:

P63600/3316

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00016921
シリーズID:	PA00000029
会議名:	International Workshop on the Physics of Semiconductor Devices - IWDPSD
回次:	1997 : 9th
会議開催地:	Delhi, India
会議開催年:	1997.12.16-1997.12.20

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