Beam annealing of ion-implanted GaAs and InP

Beam annealing of ion-implanted GaAs and InP

著者名:

Fan, J.C.C. ( Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173 )
Chapman, R.L. ( Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173 )
Donnelly, J.P. ( Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173 )
Turner, G.W. ( Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173 )
Bozler, C.O. ( Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173 )

掲載資料名:

Laser and electron-beam solid interactions and materials processing : proceedings of the Materials Research Society Annual Meeting, November 1980, Copley Plaza Hotel, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposia proceedings

シリーズ巻号:

1

発行年:

1981

開始ページ:

261

終了ページ:

274

出版情報:

New York: North Holland

ISSN:

02729172

ISBN:

9780444005953 [0444005951]

言語:

英語

請求記号:

M23500/1

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00016904
シリーズID:	PA00000010
会議名:	Materials Research Society Annual Meeting
回次:	1980
会議開催地:	Boston, MA, USA
会議開催年:	1980.11.00

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