Beam annealing of ion-implanted GaAs and InP
- 著者名:
- Fan, J.C.C. ( Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173 )
- Chapman, R.L. ( Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173 )
- Donnelly, J.P. ( Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173 )
- Turner, G.W. ( Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173 )
- Bozler, C.O. ( Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173 )
- 掲載資料名:
- Laser and electron-beam solid interactions and materials processing : proceedings of the Materials Research Society Annual Meeting, November 1980, Copley Plaza Hotel, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposia proceedings
- シリーズ巻号:
- 1
- 発行年:
- 1981
- 開始ページ:
- 261
- 終了ページ:
- 274
- 出版情報:
- New York: North Holland
- ISSN:
- 02729172
- ISBN:
- 9780444005953 [0444005951]
- 言語:
- 英語
- 請求記号:
- M23500/1
- 資料種別:
- 国際会議録
類似資料:
Materials Research Society |
Materials Research Society |
Materials Research Society |
Materials Research Society |
Materials Research Society |
SPIE - The International Society for Optical Engineering |
Materials Research Society |
Electrochemical Society |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
Materials Research Society |
12
国際会議録
Slab-coupled semiconductor lasers with a single-spatial large-diameter mode (Invited Paper)
SPIE-The International Society for Optical Engineering |