Solid phase epitaxial recrystallization of AlN films on sapphire (0001): A novel substrate approach for GaN epitaxy

Solid phase epitaxial recrystallization of AlN films on sapphire (0001): A novel substrate approach for GaN epitaxy

著者名:

Vispute, R. D.

掲載資料名:

Substrate engineering - paving the way to epitaxy : sympoisum held November 29-December 3, 1999, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

587

発行年:

2000

開始ページ:

O7.4.1

出版情報:

Warrendale, Pa.: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558994959 [1558994955]

言語:

英語

請求記号:

M23500/587

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00016704
シリーズID:	PA00000011
会議名:	MRS Fall Meeting
回次:	1999
会議開催地:	Boston, MA, USA
会議開催年:	1999.11.29-1999.12.03

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